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NTTFS4930N
Power MOSFET
30 V, 23 A, Single N ? Channel, m 8FL
Features
? Low R DS(on) to Minimize Conduction Losses
? Low Capacitance to Minimize Driver Losses
? Optimized Gate Charge to Minimize Switching Losses
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? DC ? DC Converters
? Power Load Switch
? Notebook Battery Management
? Motor Control
V (BR)DSS
30 V
http://onsemi.com
R DS(on) MAX
23 m W @ 10 V
30 m W @ 4.5 V
N ? Channel MOSFET
I D MAX
23 A
D (5 ? 8)
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
V DSS
V GS
30
± 20
V
V
G (4)
Continuous Drain
Current R q JA (Note 1)
T A = 25 ° C
T A = 85 ° C
I D
7.2
5.2
A
S (1,2,3)
Power Dissipation R q JA
(Note 1)
Continuous Drain
Current R q JA ≤ 10 s
(Note 1)
Power Dissipation
R q JA ≤ 10 s (Note 1)
Continuous Drain
Current R q JA (Note 2)
Steady
State
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
T A = 25 ° C
T A = 85 ° C
P D
I D
P D
I D
2.06
9.6
6.9
3.61
4.5
3.2
W
A
W
A
1
WDFN8
( m 8FL)
CASE 511AB
4930
A
MARKING DIAGRAM
1
S D
S 4930 D
S AYWW G D
G G D
= Specific Device Code
= Assembly Location
Power Dissipation
R q JA (Note 2)
Continuous Drain
Current R q JC (Note 1)
T A = 25 ° C
T C = 25 ° C
T C = 85 ° C
P D
I D
0.79
23
16
W
A
Y = Year
WW = Work Week
G = Pb ? Free Package
(Note: Microdot may be in either location)
Power Dissipation T C = 25 ° C
R q JC (Note 1)
Pulsed Drain Current T A = 25 ° C, t p = 10 m s
Operating Junction and Storage Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain ? to ? Source Avalanche Energy
(T J = 25 ° C, V DD = 50 V, V GS = 10 V,
I L = 12 A pk , L = 0.1 mH, R G = 25 W )
Lead Temperature for Soldering Purposes
(1/8 ″ from case for 10 s)
P D
I DM
T J ,
T stg
I S
dV/dt
E AS
T L
20.2
92
? 55 to
+150
25
6.0
7.2
260
W
A
° C
A
V/ns
mJ
° C
ORDERING INFORMATION
Device Package Shipping ?
NTTFS4930NTAG WDFN8 1500/Tape & Reel
(Pb ? Free)
NTTFS4930NTWG WDFN8 5000/Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface ? mounted on FR4 board using 1 sq ? in pad, 1 oz Cu.
2. Surface ? mounted on FR4 board using the minimum recommended pad size.
? Semiconductor Components Industries, LLC, 2012
July, 2012 ? Rev. 2
1
Publication Order Number:
NTTFS4930N/D
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